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Advances in Photoreflectance Analysis of HBT Wafers

Published online by Cambridge University Press:  26 February 2011

David Denenberg  and
Austin Blew
David Denenberg
Affiliation:
Lehighton Electronics. Inc., P. O. Box 328. Lehighton. PA 18235
Austin Blew
Affiliation:
Lehighton Electronics. Inc., P. O. Box 328. Lehighton. PA 18235
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Abstract

This Poster describes the work done in a joint effort Research and Development Program with a leading University, with funding from the state, to develop a heterojunction bipolar transistor (HBT) epitaxial wafer screening tool. A computerized characteristics to HBT performance will be described.

Photoreflectance data from about twenty HBT wafers that have been grown and have had test transistors fabricated from the wafers will be analyzed to determine the bandgap of the epitaxial materials and the electric fields.

Comparison with previous works will be made in an attempt to reach a unified agreement in understanding that may lead to an ASTM test method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 247
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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