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Advanced Dielectrics for Passivation of INSB

Published online by Cambridge University Press:  22 February 2011

J. C. Barbour ,
S. A. Casalnuovo  and
S. R. Kurtz
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
S. A. Casalnuovo
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
S. R. Kurtz
Affiliation:
Sandia National Laboratories, Albuquerquqe, NM 87185
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Abstract

A combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiOx Ny on InSb at temperatures from 30°C to 250°C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (C-V) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si3ON2 on InSb, and sulfided layers capped with S3ON2 all exhibited good C-V properties consistent with interface state densities on the order of 1011/cm2-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si3N4 on InSb and the adhesion of Si3ON2 on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 613
Copyright
Copyright © Materials Research Society 1993

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References

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