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Advanced Alkali Cleaning Solution for Simplification of Semiconductor Cleaning Process

Published online by Cambridge University Press:  10 February 2011

Hitoshi Morinaga ,
Masumi Aoki ,
Toshiaki Maeda  and
Masaya Fujisue
Hitoshi Morinaga
Affiliation:
Hiroyuki TANAKA, and Minoru TOYODA Mitsubishi Chemical Corporation Kurosaki, Yahatanishi-ku, Kitakyushu 806, Japan 2701236@cc.m-kagaku.co.jp
Masumi Aoki
Affiliation:
Hiroyuki TANAKA, and Minoru TOYODA Mitsubishi Chemical Corporation Kurosaki, Yahatanishi-ku, Kitakyushu 806, Japan
Toshiaki Maeda
Affiliation:
Hiroyuki TANAKA, and Minoru TOYODA Mitsubishi Chemical Corporation Kurosaki, Yahatanishi-ku, Kitakyushu 806, Japan
Masaya Fujisue
Affiliation:
Hiroyuki TANAKA, and Minoru TOYODA Mitsubishi Chemical Corporation Kurosaki, Yahatanishi-ku, Kitakyushu 806, Japan
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Abstract

NH4OH/H2O2/H2O (called APM or SC–1) cleaning combined with megasonic irradiation is found to feature outstanding removal efficiency for various types of particulate contaminant. The conventional APM cleaning, however, allows metallic impurity in solution to adhere onto substrate surface, and it must be followed by acid cleaning such as HCI/IH2O2/H2O (called HPM or SC–2) cleaning to remove metallic impurity from substrate. The advanced APM cleaning using MC–1 which is alkali cleaning agent containing chelating agent has been developed, and this new cleaning is found capable for preventing various metallic impurities including Al in solution from contaminating substrate surface. Besides, with cleaning conditions optimized, the advanced APM cleaning using MC–1 can also remove metallic impurity from substrate surface. In short, this modified APM cleaning is capable for removing particle and metallic impurity at the same time, which is not possible with the conventional cleaning technology. The cleaning process of semiconductor manufacturing process can be simplified if HPM cleaning is eliminated by introducing the advanced APM cleaning using MC–1. This leads to drastic reduction of cleaning cost and improvement of throughput of the cleaning process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 35
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Kern, W. and Puotinen, D.A., RCA Rev., Vol.31, pp.187–205, June, (1970).Google Scholar
2. Morinaga, H., Suyama, M. Nose, M., Verhaverbeke, S., and Ohmi, T., IEICE Trans. Electron., Vol.E79–C, No.3, pp.343–362, Japan, March, (1996).Google Scholar
3. Morinaga, H., Fujisue, M., Aoki, M., Maeda, T., Tanaka, H., and Toyoda, M., in Proceedings of 27th Symposium on ULSI Ultra Clean Technology, pp.75–84, Ultra Clean Society, Tokyo, March, (1996).Google Scholar
4. Morinaga, H., Aoki, M., Maeda, T., Fujisue, M., Tanaka, H., and Toyoda, M., in Proceedings of 16th Annual Semiconductor Pure Water and Chemical Conference, Vol.2, pp.109–130, Santa Clara, March, (1997).Google Scholar
5. Morinaga, H. and Ohmi, T., in Proceedings of The Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing., Edited by Novak, R.E. and Ruzyllo, J., pp.257–268, The Electrochemical Society, Inc., Pennington, NJ, (1996).Google Scholar
6. Cohen, S.L., Syverson, W., Basilier, S., Fleming, M.J., Furman, B., Gow, C., Pope, K., Tsai, R., and Liehr, M., in Proceedings of the Second International Symposium on Ultra-clean Processing of Silicon Surfaces, pp.35–39, Acco Leuven, Belgium, (1994).Google Scholar
7. ltano, M., Kern, F.W., Jr., Miyashita, M., and Ohmi, T., IEEE Trans. Semicond. Manufact., Vol.6, No.3, pp.258–267, (1993).Google Scholar
8. Hiratsuka, H., Tanaka, M., Tada, T., Yoshimura, R., and Matsushita, Y., Ultra Clean Technology, Vol.3, No.3, pp.18–27, Ultra Clean Society, Tokyo, (1991).Google Scholar
9. Mori, Y., Uemura, K., Shimanoe, K., and Sakon, T., J. Electrochem. Soc., Vol.142, No.9, pp.3104–3109, September, (1995).CrossRefGoogle Scholar
10. Ohtsuka, S., Sakon, T., Atsumi, J., Japanese patent, (JP) 1-289937, (1989).Google Scholar
11. Verhaverbeke, S., Meuris, M., Mertens, P.W., Heyns, M.M., Philipossian, A., Graf, D., and Schnegg, A., Tech. Dig. IEDM '91, pp.71–74, (1991).Google Scholar
12. Takiyama, M., Ohtsuka, S., Hayashi, S., Tachimori, M., in Proceedings of 19th Workshop on ULSI Ultra Clean Technology, pp.95–107, Tokyo, September, (1992).Google Scholar
13. Akiya, H., Kuwano, S., Matsumoto, T., Itsumi, H., and Yabumoto, N., J. Electrochem. Soc., Vol.141, No.10, pp.L139–L142, October, (1994).CrossRefGoogle Scholar
14. Roche, T., Adler, S., Cosway, R., Schauer, S., and Liu, Lisa, in Proceedings of The Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing., Edited by Novak, R.E. and Ruzyllo, J., pp.257–268, The Electrochemical Society, Inc., Pennington, NJ, (1996).Google Scholar
15. Tsuji, M., Muramatsu, M., and Aoto, N., Extended Abstracts of 188th Electrochemical Society meetings, pp.752–753, Chicago, October, (1995).Google Scholar
16. Shimono, T. and Tsuji, M., Extended Abstracts of Electrochemical Society meetings, Vol.91–1, pp.278–279, Washington, DC, May, (1991).Google Scholar
17. deLarios, J.M., Kao, D.B., Deal, B.E., and Helms, C.R., J. Electrochem. Soc., Vol.138, No.8, pp.2353–2361, August, (1991).CrossRefGoogle Scholar
18. Ringbom, A., “Complexation in analytical chemistry,” John Wiley and Sons Inc., New York, (1963).Google Scholar
19. Sako, N., Tanaka, H., Toyoda, M., Naka, J., and Kuramoto, K., Bunseki Kagaku (Japanese Journal), Vol.43, pp.771–776, (1994).CrossRefGoogle Scholar
20. Morinaga, H., Suyama, M., Yonekawa, N., Nose, M., and Ohmi, T., International Conference on Advanced Microelectronics Devices and Processing, pp.397–402, Sendai, March, (1994).Google Scholar