Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-07-05T05:51:08.973Z Has data issue: false hasContentIssue false

Adhesion of Reactive Ion Implanted Copper Films on Al2O3 and SiO2

Published online by Cambridge University Press:  25 February 2011

P. B. Madakson
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
J. E. E. Baglin
Affiliation:
IBM, Thomas J. Watson Research Center, Yorktown Heights, New York 10598
Get access

Abstract

Implantation of reactive ions at the Cu-Al2O3 or Cu-SiO2 interface has been explored as a means of producing adhesion of thin copper films on these otherwise inert substrates. The process may promote complex chemical bonding at the interface due to the presence of a reactive implanted species; it may also enhance adhesion by interface layer mixing. Thin copper films (400–800Å) were deposited on fused quartz or sapphire substrates. After implantation and, in some cases, heat treatment thick Cu stripes were added to enable peel testing of adhesion strength. The reactive ion species implanted were oxygen (100 keV), or titanium (120 keV) or chromium (80 or 160 keV), to doses ranging from 1015 to 1017 ions/cm2. In each case, the energy was chosen to place the reactive implant at the interface region. For comparison with simple ion beam mixing, a similar set of samples was implanted with krypton ions at 2 MeV to doses of 1 or 3.6 × 1016 ion/cm2. The peel strength was found to be about 0.5 gm/mm for the unimplanted Cu-sapphire samples; 1.3 gm/mm for those implanted with oxygen; 18 gm/mm for those implanted with krypton; 90 gm/mm for those implanted with chromium; and more than 200 gm/mm for the titanium implanted samples. No significant increase in adhesion was achieved for the implanted Cu-quartz samples, except for the titanium implant, which gave an average peel strength of 66 gm/mm after anneal for the dose of 5 × 1016 Ti+/cm2. Studies of the interfaces and of the peeled surfaces were made, using RBS. Changes in both chemical bonding and interface morphology appear to contribute to the phenomena of enhanced adhesion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bottiger, J., Baglin, J.E.E., Brusic, V., Clark, G.J. and Anfiteatro, D., Mat. Res. Soc. Symp. Proc. 25, 203 (1984).Google Scholar
2. Baglin, J.E.E. and Clark, G.J., Nuclear Instruments and Methods in Physics Research, B7/8, 881 (1985).Google Scholar
3. Baglin, J.E.E., Chapter 15 in Ion Beam Modification of Insulators eds. Mazzoldi, P. and Arnold, G.W., Elsevier, Amsterdam 1987.Google Scholar
4. Burnett, P.J. and Page, T.F., Deformation of Ceramic Materials II, (Plenum Press, 18, New York, 1971), edited by Tressler, R.E. and Bradt, R.C., p. 669.Google Scholar
5. Hansen, M., Constitution of Binary Alloys, (McGraw-Hill, New York, 1958).Google Scholar
6. Kelly, A. and Nicholson, R.B., Strengthening Methods in Crystals, (Elsevier, New York, 1971), p. 403.Google Scholar
7. Honeycombe, R.W.K., The Plastic Deformation of Metals, (Edward Arnold, London, 1984).Google Scholar
8. Eernisse, E.P. and Norris, C.B., J. Appl. Phys. 45 5196(1974).Google Scholar