Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-12T11:33:59.214Z Has data issue: false hasContentIssue false
  • English
  • Français

Activation of Yb Luminescence in GaAs by Group VI Elements Codoping

Published online by Cambridge University Press:  10 February 2011

V. M. Konnov ,
T. V. Larikova ,
N. N. Loyko ,
V. A. Dravin ,
V. V. Ushakov  and
A. A. Gippius
V. M. Konnov
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
T. V. Larikova
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
N. N. Loyko
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
V. A. Dravin
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
V. V. Ushakov
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
A. A. Gippius
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.fian.msk.su
Get access

Abstract

Yb in GaAs is generally believed to be optically inactive due to very low fraction of Yb in substitutional position. In the present work it is demonstrated that Yb can be rendered optically active in GaAs if it is incorporated in three-component complexes (Yb+O+S/Se/Te).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 187
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rare Earth Doped Semiconductors, ed. by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Material Research Society Symposium Proceedings 301, Material Research Society, Pittsburgh, Pennsylvania 1993).Google Scholar
2. Boyn, R., Phys. Stat. Sol. (b), 48, pp.11–47 (1988).Google Scholar
3. Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.-H., Poate, J.M. and Kimerling, L.C., J. Appl. Phys. 70, No.5, pp.2672–2677 (1991).Google Scholar
4. Colon, J.E., Elsaesser, D.W., Yeo, Y.K., Hengehold, R.L. and Pomrenke, G.S. in [1], pp. 169–174.Google Scholar
5. Gregorkiewicz, T., Liesert, B.J.Heijmink, Tsimperidis, I., de Maat-Gersdorf, I., Ammerlaan, C.A.J. and Godlewski, M. in [1], pp. 239–250.Google Scholar
6. Kozanecki, A. and Graetzschel, R., J. Appl. Phys. 68, No.2, pp. 517–522 (1990).Google Scholar
7. Kozanecki, A. in [1], pp. 219–224.Google Scholar
8. Konnov, V. M. and Loiko, N. N., Bulletin of the Lebedev Physics Institute, No. 12, pp.20–23 (Allerton Press, Inc./New York, 1993).Google Scholar
9. Konnov, V. M., Loiko, N. N. and Dravin, V. A., Bulletin of the Lebedev Physics Institute, No.3, pp.20–23 (Allerton Press, Inc./New York 1994).Google Scholar
10. Kozanecki, A., Chan, M., Jeynes, C., Sealy, B. and Homewood, K., Sol. St. Comm. 78, No.8, pp.763–766 (1991).Google Scholar
11. Takahei, K., Taguchi, A. and Horikoshi, Y., J. Appl. Phys. 76, No.7, pp. 4332–4339 (1994).Google Scholar