Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-28T13:07:09.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers

Published online by Cambridge University Press:  10 February 2011

A. Yu. Kuznetsovt ,
J. Cardenast ,
B. G. Svenssont ,
A. Nylandsted Larsen  and
J. Lundsgaard Hansen
A. Yu. Kuznetsovt
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; kuznet@ele.kth.se
J. Cardenast
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; kuznet@ele.kth.se
B. G. Svenssont
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista- Stockholm, Sweden; kuznet@ele.kth.se
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
Get access

Abstract

Enhanced Sb diffusion in biaxially compressed Si1-x-Gex layers is observed. Assuming the prefactors to be stress independent the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.2 and Si0 8 Ge0.2 were extracted as 0.4 × 102 exp[− (3.98(eV) ± 0.12)/kT] and 1.3x 102 exp[− (3.85(eV) ±0.12)/kT] cm2 /s, respectively. The activation volume of Sb diffusion in Si1-xGex (x ≤ 0.2) is estimated to be close to ω, where ω is the volume corresponding to a silicon lattice site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 213
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. An extensive bibliography can be found in the recent PhD thesis by Mitha, S., PhD Thesis, Harvard University, 1995.Google Scholar
2. See, for instance the review paper by Larsen, A. Nylandsted and Kringhoj, P., Physica Scripta, T69, 92 (1997) and references therein.Google Scholar
3. Larsen, A. Nylandsted and Kringhoj, P., Appl.Phys.Lett., 68, 2684(1996).Google Scholar
4. Indeed, the narrower a Siz.,Ge5 layer the higher annealing temperature (and/or the higher Ge content) can be used without the occurrence of the stress relaxation. For details on the thickness/content/relaxation temperature dependence see R.Hull, in Properties of Strained and Relaxed Silicon Germanium (INSPEC, London, UK) 1995.Google Scholar
5. Noble, D.B., Hoyt, J.L., Gibbons, J.F., Scott, M.P., Laderman, S.S., Rosner, S.J. and Kamins, T.I., Appl.Phys.Lett., 55, 1978(1989).Google Scholar
6. Jain, S.C., Maes, H.E., Pinardi, K. and Wolf, I.De, J.Appl.Phys., 79, 8145(1996).Google Scholar
7. A linear extrapolation from Si and Ge elastic constants to the actual alloy composition was used in the present estimation of a. For more details see Baker, S.P. and Artz, E., in Properties of Strained and Relaxed Silicon Germanium (INSPEC, London, UK) 1995.Google Scholar
8. Kringhoj, P., Larsen, A.Nylandsted and Shirayev, S.Yu., Phys.Rev.Lett, 76, 3372(1996).Google Scholar
9. Paine, A.D.N., Morooka, M., Willoughby, A.F.W., Bonar, J.M., Phillips, P., Dowsett, M.J., and Cooke, G., Mat. Sci. For. 196–201, 345 (1995).Google Scholar
10. Shewmon, P.G., Diffusion in Solids, (J. Williams Book Company, Jenks, USA), 1983.Google Scholar
11. Jeffery, R.N. and Lazarus, D., J. Appl. Phys. 41, 3186 (1970).Google Scholar
12. For the case of point defect assisted diffusion δV = δVf + δVf and δVm are the formation and migration volumes of the defect mediating the diffusion process. In its turn the values of δVf and δVm should not exceed Q2 for conventional solids (see Ref. 10).Google Scholar
13. Aziz, M.J., Appl. Phys. Lett. 70, 2810 (1997).Google Scholar
14. Kuznetsov, A.Yu., Cardenas, J., Grahn, J., Svensson, B.G., Hansen, J.Lundsgaard, and Larsen, A.Nylandsted, submitted to Phys. Rev. B (980223).Google Scholar