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Activation Energy and Blistering Rate in Hydrogen-implanted Semiconductors

Published online by Cambridge University Press:  30 March 2012

Daniel J. Pyke ,
Robert G. Elliman  and
Jeffrey C. McCallum
Daniel J. Pyke
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
Robert G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
Jeffrey C. McCallum
Affiliation:
Microanalytical Research Centre, School of Physics, University of Melbourne, VIC 3010, Australia.
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Abstract

Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These results are compared with reported measurements and discussed in relation to proposed models of hydrogen blistering.

Keywords

HSiGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1424: Symposium SS – Properties and Processes at the Nanoscale Nanomechanics of Material Behavior , 2012 , mrsf11-1424-ss07-53
Copyright
Copyright © Materials Research Society 2012

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References

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