Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-16T15:14:24.572Z Has data issue: false hasContentIssue false
  • English
  • Français

Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle

Published online by Cambridge University Press:  17 March 2011

Silke Paul ,
Wilfried Lerch ,
Xavier Hebras ,
Nikolay Cherkashin  and
Fuccio Cristiano
Silke Paul
Affiliation:
Mattson Thermal Products GmbH, Daimlerstr. 10, 89160 Dornstadt, Germany
Wilfried Lerch
Affiliation:
Mattson Thermal Products GmbH, Daimlerstr. 10, 89160 Dornstadt, Germany
Xavier Hebras
Affiliation:
LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France Ion Implantation Group, CEMES-LAAS, Toulouse
Nikolay Cherkashin
Affiliation:
CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse, France Ion Implantation Group, CEMES-LAAS, Toulouse
Fuccio Cristiano
Affiliation:
LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse, France Ion Implantation Group, CEMES-LAAS, Toulouse
Get access

Abstract

In this paper, the evolution of sheet resistance, junction depth and defects during the whole thermal cycle of a typical spike anneal with a peak temperature of 1050°C was investigated in detail. To this purpose, spike anneals were performed at peak temperatures ranging from 800°C up to 1050°C in temperature steps of 50°C. These experiments were done both on B+ (500 eV, 1.1015 cm−2) and BF2+ (2.2 keV, 1.1015 cm−2) implanted wafers. It is found that for temperatures below 850°C BF2+ implanted wafers exhibit a much better electrical activation, resulting in a lower sheet resistance, than B+ implanted ones, due to the amorphisation process occurring during the BF2+ implant and the subsequent solid phase epitaxial growth. In this low temperature regime, boron clustering takes place very rapidly in B+ implanted wafers, as confirmed by both SIMS and TEM analysis. In particular, “large” clusters, i.e. with diameter above the TEM detection limit (∼2 nm), undergo a classical Ostwald ripening process (increase in size, decrease in density). SRP measurements indicate that boron activation in this low temperature regime is not related to cluster dissolution. On the other hand, after the initial solid phase epitaxial regrowth, BF2+ implanted wafers exhibit a slight increase in sheet resistance, due to boron clustering induced by the dissolution of end of range defects. Finally, it is found that at higher spike anneal temperatures (above 850°C), both B+ and BF2+ implanted wafers exhibit a similar behaviour, with a progressive decrease in sheet resistance due to boron cluster dissolution and dopant diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C5.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. International Technology Roadmap for Semiconductors 2003 Edition, http://public.itrs.net/Files/2003ITRS/Home2003.htmGoogle Scholar
2. Mokhberi, A., Kasnavi, R., Griffin, P. B., Plummer, J. D., Appl. Phys. Lett. 80 (19), 3530–3532 (2002)Google Scholar
3. Robertson, L. S., Jacques, J., Jones, K. S.. Law, M. E., Downey, D. F., Rendon, M. J., Sing, D., IWJT, 55–59, (2001)Google Scholar
4. Lerch, W., Paul, S., Downey, D. F., Arevalo, E. A., Proceedings of 7th International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 111–118 (2003)Google Scholar
5. Pawlak, B. J., Lindsay, R., Surdeanu, R., Pages, X., Vandervorst, W., Jeugd, K. v. d., Electrochem. Soc. Proc. 14, 99–104 (2003)Google Scholar
6. Lerch, W., Paul, S., Downey, D. F., Arevalo, E. A., Electrochem. Soc. Proc. 14, 43–49 (2003)Google Scholar
7. Ehrke, U., Sears, A., Lerch, W., Paul, S., Roters, G., Downey, D. F., Arevalo, E. A., J. Vac. Sci. Technol. B 22 (1), 346–349 (2004)Google Scholar
8. Cristiano, F., Hebras, X., Cherkashin, N., Claverie, A., Lerch, W., Paul, S., Appl. Phys. Lett. 83 (26), 5407–5409 (2003)Google Scholar
9. Lerch, W., Paul, S., Niess, J., Cristiano, F., Lamrani, Y., Calvo, P., Cherkashin, N., Downey, D. F., Arevalo, E. A., to be published at the Electrochemical Society Meeting 2004, San Antonio, USA Google Scholar
10. Pawlak, B. J., Surdeanu, R., Colombeau, B., Smith, A. J., Cowern, N. E. B., Lindsay, R., Vandervorst, W., Brijs, B., Richard, O., Cristiano, F., Appl. Phys. Lett. 84 (12), 2055–2057 (2004)Google Scholar
11. Impellizzeri, G., Santos, J. H. R. dos, Mirabella, S., Priolo, F., Napolitani, E., Carnera, A., Appl. Phys. Lett. 84 (11), 1862–1864 (2004)Google Scholar
12. Sato, Y., Kawashima, I., Electrochem. Soc. 141 (5), 1381–1386 (1994)Google Scholar
13. Dokumaci, O., Ronsheim, P., Hegde, S., Cabral, C. Jr., Electrochem. Soc. Proc. 14, 105–110 (2003)Google Scholar