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Accumulation of Implantation Damage in MEV Implanted Diamond Crystals

Published online by Cambridge University Press:  22 February 2011

John D. Hunn ,
S.P. Withrow ,
R.E. Clausing ,
L. Heatherly ,
J. Bentley ,
D.M. Hembree Jr.  and
N.R. Parikh
John D. Hunn
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
S.P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
R.E. Clausing
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
L. Heatherly
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
J. Bentley
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
D.M. Hembree Jr.
Affiliation:
Oak Ridge Y-12 Plant, Oak Ridge, Tennessee 37831
N.R. Parikh
Affiliation:
University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599
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Abstract

Single crystal, type IIa natural diamond substrates have been implanted with 4 MeV carbon ions to doses ranging from 0.5–130×1016 cm-2. The accumulation of implantation damage is studied by Raman and RBS/channeling. Similar effects are observed for crystals of [100], [110], and [111] orientation but with different rates of damage accumulation. With increasing implantation damage, the triply degenerate Raman mode at 1332 cm-1 broadens and shifts down to around 1300 cm-1. This corresponds to a peak in the one-phonon density of states as predicted for Raman from an amorphous sp3 network. There is no evidence for the existence of sp2 carbon in the implanted area. Additional non-graphite Raman peaks appear at 1451, 1494, and 1635 cm-1. At the higher doses, the 1332 cm-1 Raman mode is no longer observed; however, RBS/channeling still shows the surface region to be crystalline and it is possible to grow high quality homoepitaxial diamond films on these substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 45
Copyright
Copyright © Materials Research Society 1994

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References

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