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Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs

Published online by Cambridge University Press:  25 February 2011

S. J. Pearton ,
F. Ren ,
C. R. Abernathy ,
A. Katz ,
W. S. Hobson ,
S. N. G. Chu  and
J. Kovalchick
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. Kovalchick
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

The incorporation of thin C- or Zn-doped layers under metal Schottky contacts on n-type GaAs can lead to significant enhancements in the effective barrier height. A single C δ-doped layer (p = 1.3 × 1020 cm–3) within 100 Å of the surface leads to a barrier height of ∼0.9 eV, a significant increase over the value for a control sample (∼0.75 eV). The use of two sequential δ-doped layers can lead either to a further enhancement in barrier height, or a decrease depending on whether these layers are fully depleted at zero applied bias. The temperature dependence of current conduction in barrier-enhanced diodes was measured. Both the ideality factor and breakdown voltage degrade with increasing temperature. Zinc δ-doping in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 491
Copyright
Copyright © Materials Research Society 1990

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References

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