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X-Ray Investigation of Strain Relaxation in Short-Period SimGen Superlattices using Reciprocal Space Mapping

Published online by Cambridge University Press:  25 February 2011

P. Hamberger
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
E. Koppensteiner
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
G. Bauer
Affiliation:
Johannes Kepler University, Institut fir Halbleiterphysik, A-4040 Linz, Austria
H. Kibbel
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
H. Presting
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
E. Kasper
Affiliation:
Daimler Benz AG, Forschungszentrum, D-7900 Ulm, Germany
A. Pesek
Affiliation:
Johannes Kepler University, Forschungsinstitut fir Optoelektronik, A-4040 Linz, Austria
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Abstract

The optoelectronic properties of SimGen strained layer superlattices (SLS's) depend strongly on the structural perfection. We used double crystal and triple axis x-ray diffractometry to characterize the structural properties of short period Si9Ge6 SLS's grown on about lμm thick step-graded SiGe alloy buffers. As grown SLS's and samples annealed subsequently at 550°C, 650°C and 780°C for 60 mmn were investigated. Precise strain data were extracted from two-dimensional reciprocal space maps around (004) and (224) reciprocal lattice points. These data were used as refined input parameters for the dynamical simulation of the integrated intensity along the qll[004] direction. Annealing causes interdiffusion as indicated by the decreasing superlattice (SL)-satellite peak intensities and by the change of the Si/Ge thickness ratio. However, the full width at half maximum of the SL satellite peaks does not change significantly with annealing up to 650°C. The in-plane SL lattice constant in both samples is increased only slighty by annealing (< 9×10−3 Å). Consequently the interface intermixing due to interdiffusion is the main cause for the shift of the luminescence energy to higher values in these annealed samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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X-Ray Investigation of Strain Relaxation in Short-Period SimGen Superlattices using Reciprocal Space Mapping
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