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X-ray Characterisation of a V90S Sige MBE System

Published online by Cambridge University Press:  22 February 2011

Adrian Powell ,
Richard Kubiak ,
Evan Parker ,
Keith Bowen  and
Milena Polcarova
Adrian Powell
Affiliation:
Department of Physics, University of Warwick,Conventry CV4 7AL, England
Richard Kubiak
Affiliation:
Department of Physics, University of Warwick,Conventry CV4 7AL, England
Evan Parker
Affiliation:
Department of Physics, University of Warwick,Conventry CV4 7AL, England
Keith Bowen
Affiliation:
Department of Engineering, University of Warwick, Conventry CB4 7AL, England
Milena Polcarova
Affiliation:
Department of Engineering, University of Warwick, Conventry CB4 7AL, England
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Abstract

X ray techniques have enabled a fast characterisation of a new VG Semicon V90S MBE system for growth of Si and SiGe material. X-ray rocking curves have allowed characterization of SiGe layers to tolerances as tight as ± 0.1 At%. X-Y uniformity measurements demonstrated that layers are grown to ± 0.5 % over a 150 mm wafer. Information on the flux rate uniformity during growth can be obtained from analysis of superlattice structures. These enable calculation of “worst case” flux variation during a growth run. An empirical relationship has been found that enables the prediction of the degree of residual strain remaining in a buffer structure grown beyond the metastable critical thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 161
Copyright
Copyright © Materials Research Society 1991

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References

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