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Wide-spectral-range, Expanded-beam Spectroscopic Ellipsometer and its Application for Imaging/Mapping of Graded Nanocrystalline Si:H Films

Published online by Cambridge University Press:  19 July 2011

A. Nemeth
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA Photonics, MFA, Budapest, Hungary
D. Attygalle
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
L. R. Dahal
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
P. Aryal
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
Z. Huang
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
C. Salupo
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
P. Petrik
Affiliation:
Photonics, MFA, Budapest, Hungary
G. Juhasz
Affiliation:
Photonics, MFA, Budapest, Hungary
C. Major
Affiliation:
Photonics, MFA, Budapest, Hungary
O. Polgar
Affiliation:
Photonics, MFA, Budapest, Hungary
M. Fried
Affiliation:
Photonics, MFA, Budapest, Hungary
B. Pecz
Affiliation:
Photonics, MFA, Budapest, Hungary
R. W. Collins
Affiliation:
Center for Photovoltaics Innovation & Commercialization, University of Toledo, Toledo, OH, USA
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Abstract

A prototype expanded-beam spectroscopic ellipsometer has been developed that uses uncollimated (non-parallel, diffuse) illumination with a detection system consisting of an angle-of-incidence-sensitive pinhole camera for high-speed, large-area imaging/mapping applications. The performance of this novel instrument is being tested for imaging/mapping of mixed-phase hydrogenated silicon films having graded amorphous (a-Si:H) and nanocrystalline (nc-Si:H) components throughout the film depth. The speed of the measurement system makes the instrument suitable for use on production lines. The precision enables detection of subnanometer thicknesses, and refractive index and extinction coefficient changes of 0.01. Angle-of-incidence and mirror calibrations are made via well-known sample structures. Alternative commercial instrumentation for mapping by spectroscopic ellipsometry must translate the sample or ellipsometer in two dimensions. For this instrumentation, even a 15 × 15 cm2 sample with cm2 resolution requires > 200 measurements and at least 15 min. By imaging along one dimension in parallel, the expanded-beam system can measure with similar resolution in < 2 min. The focus of recent instrumentation efforts is on improving the overall system spectral range and its performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

1. Patent pending:P0700366, PCT/HU2008/000058.Google Scholar
2. Fried, M., Juhasz, G., Major, C., Petrik, P., Polgar, O., Horvath, Z., Nutsch, A., “Expanded beam (macro-imaging) ellipsometry”, Thin Solid Films 519, 27302736 (2011).10.1016/j.tsf.2010.12.067CrossRefGoogle Scholar
3. Collins, R. W., Ferlauto, A. S., Ferreira, G. M., Chen, C., Koh, J., Koval, R. J., Lee, Y., Pearce, J. M., and Wronski, C. R., “Evolution of microstructure and phase in amorphous, protocrystalline, and micro crystalline silicon studied by real time spectroscopic ellipsometry”, Solar Energy Materials and Solar Cells 78, 143180 (2003).CrossRefGoogle Scholar

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Wide-spectral-range, Expanded-beam Spectroscopic Ellipsometer and its Application for Imaging/Mapping of Graded Nanocrystalline Si:H Films
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Wide-spectral-range, Expanded-beam Spectroscopic Ellipsometer and its Application for Imaging/Mapping of Graded Nanocrystalline Si:H Films
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