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What Makes Good Templates for HVPE GaN Growth?

Published online by Cambridge University Press:  01 February 2011

C. E. C. Dam ,
Andrzej P. Grzegorczyk ,
Paul R. Hageman  and
Poul K. Larsen
C. E. C. Dam
Affiliation:
Corina.Dam@science.ru.nl, Radboud University Nijmegen, Toernooiveld 1, Nijmegen, N/A, 6525 ED, Netherlands
Andrzej P. Grzegorczyk
Affiliation:
A.Grzegorczyk@science.ru.nl, Radboud University Nijmegen, Experimental Solid State Physics III, Netherlands
Paul R. Hageman
Affiliation:
P.Hageman@science.ru.nl, Radboud University Nijmegen, Experimental Solid State Physics III, Netherlands
Poul K. Larsen
Affiliation:
PK.Larsen@science.ru.nl, Radboud University Nijmegen, Experimental Solid State Physics III, Netherlands
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Abstract

MOCVD templates grown on sapphire with a Gallium Treatment Step (GTS) instead of a low temperature AlN or GaN nucleation layer are used for HVPE growth. Four templates are used with varying times of MOCVD buffer layer growth. 25 μm GaN is grown with HVPE on these templates. The HVPE layers are studied with optical microscopy and X-ray diffraction (XRD). The results show that the thickness of the buffer layer is not important for the quality of the HVPE grown layer once sufficient nucleation sites for HVPE growth are present. The excellent quality of the templates with GTS for HVPE growth is shown with a 100 μm thick HVPE layer on a 2” template. No cracks in either sapphire or GaN are visible.

Keywords

chemical vapor deposition (CVD) (chemical reaction)nucleation & growthepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF29-01
Copyright
Copyright © Materials Research Society 2006

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References

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