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Viscosity, Structural Relaxation and Defect Annihilation Kinetics of Amorphous Si

Published online by Cambridge University Press:  26 February 2011

Ann Witvrouw  and
Frans Spaepen
Ann Witvrouw
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
Frans Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

Substrate curvature measurements were used to monitor viscous flow in ion beam sputtered amorphous Si for temperatures ranging from 150 to 400 °C. The viscosity increases linearly with time, characteristic of a bimolecular defect annihilation process. This is consistent with the defects governing viscous flow being dangling bonds. The isoconfigurational activation enthalpy for the viscosity is 1.8 ±.3 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 21
Copyright
Copyright © Materials Research Society 1992

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