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Vacancies and Interstitial Atoms in Irradiated Silicon

Published online by Cambridge University Press:  15 February 2011

P. Ehrhart  and
H. Zillgen
P. Ehrhart
Affiliation:
IFF, Forschungszentrum Jülich GmbH, D 52425 Jülich, Germany
H. Zillgen
Affiliation:
IFF, Forschungszentrum Jülich GmbH, D 52425 Jülich, Germany
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Abstract

Differently doped Si-wafers were irradiated with 2.5MeV electrons and subsequently investigated by X-ray diffraction methods. We show that a high concentration of defects (>1016 cm−3) can be frozen in at 4K and that a large fraction of the defects is stabilized in the form of close Frenkel pairs. These Frenkel pairs are characterized by the nearly perfect cancellation of the long-range displacement fields of the interstitial atom and the vacancy. We discuss the absolute size of these displacements as well as the introduction rate of the defects, which is of the order of Σ = 1cm−1. Similar results are obtained for weakly doped Cz-Si or FZ-Si and for degenerate p-type Si(B) and n-type Si(As), i.e., the results are independent of the oxygen content of the samples and of the position of the Fermi level. The high defect introduction rates are at variance with the results of electrical and EPR investigations and indicate that these methods detect only a few percent of the total defect concentration which is produced and frozen in at 4K. The consequences for the understanding of the defect production in Si and for the assumption of an athermal migration of interstitial atoms are discussed. In addition we compare the defect patterns observed after 4K irradiation to those observed after room-temperature irradiations and discuss the thermally activated defect reactions up to the final annealing at 1000K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 175
Copyright
Copyright © Materials Research Society 1997

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References

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