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UV Raman Spectroscopy Study of Strain Induced by Buried Silicon Nitride Layer in the BOX of Silicon On Insulator Substrates

Published online by Cambridge University Press:  31 January 2011

Vincent Paillard
Affiliation:
vincent.paillard@cemes.fr, CEMES, Toulouse, France
Jesse Groenen
Affiliation:
jesse.groenen@cemes.fr, CEMES, Toulouse, France
Pascal Puech
Affiliation:
pascal.puech@cemes.fr, CEMES, Toulouse, France
Younes Lamrani
Affiliation:
younes.lamrani@cea.fr, CEA, LETI, Grenoble, France
Marek Kostrzewa
Affiliation:
marek.kostrzewa@cea.fr, CEA, LETI, Grenoble, France
Julie Widiez
Affiliation:
julie.widiez@cea.fr, CEA, LETI, Grenoble, France
Jean-Charles Barbé
Affiliation:
jean-charles.barbe@cea.fr, CEA, LETI, Grenoble, France
Chrystel Deguet
Affiliation:
chrystel.deguet@cea.fr, CEA, LETI, Grenoble, France
Laurent Clavelier
Affiliation:
laurent.clavelier@cea.fr, CEA, LETI, Grenoble, France
Bruno Ghyselen
Affiliation:
bruno.ghyselen@soitec.fr, SOITEC, Bernin, France
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Abstract

Compressive strained Silicon from a Silicon on Insulator (SOI) substrate is obtained by replacing the buried oxide layer by a strained silicon nitride layer. The silicon overlayer and the buried dielectric are etched down to the substrate to form narrow wires (down to 300 nm wide). The Si overlayer is then expected to acquire compressive strain thanks to the relaxation of the SiN layer. The goal is to obtain a high uniaxial stress perpendicular to the wires. The structures and the strain are modeled using finite element simulations. The strain elements are used to calculate Raman spectra. Theoretical results are compared to experimental profiles deduced from resonant (UV) micro Raman experiments.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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UV Raman Spectroscopy Study of Strain Induced by Buried Silicon Nitride Layer in the BOX of Silicon On Insulator Substrates
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UV Raman Spectroscopy Study of Strain Induced by Buried Silicon Nitride Layer in the BOX of Silicon On Insulator Substrates
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