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Ultraviolet-Assisted Pulsed Laser Deposition of Barium Strontium Titanate on Si: Characterization of the Interfacial Layer

Published online by Cambridge University Press:  01 February 2011

V. Craciun
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 326110 Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest, Romania
D. Craciun
Affiliation:
Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest, Romania
N. D. Bassim
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 326110
J. M. Howard
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 326110
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 326110
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Abstract

Barium strontium titanate (BST) thin films were grown directly on Si substrates by the conventional and ultraviolet-assisted pulsed laser deposition techniques. X-ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, current-voltage, capacitance-voltage, and high-resolution transmission electron microscopy were used to investigate the composition, thickness, and electrical properties of the grown structures. It has been found that at the interface between the Si substrate and the grown dielectric layer, an interfacial layer was always formed. The chemical composition of the layer consisted of SiOx partially mixed with the grown BST, without any evidence of silicate formation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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Ultraviolet-Assisted Pulsed Laser Deposition of Barium Strontium Titanate on Si: Characterization of the Interfacial Layer
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Ultraviolet-Assisted Pulsed Laser Deposition of Barium Strontium Titanate on Si: Characterization of the Interfacial Layer
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