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Ultrathin Zirconium Dioxide Chemically Deposited at a Low Thermal Budget

Published online by Cambridge University Press:  11 February 2011

Stefan Harasek ,
Heinz D. Wanzenboeck ,
Helmut Langfischer  and
Emmerich Bertagnolli
Stefan Harasek
Affiliation:
Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Heinz D. Wanzenboeck
Affiliation:
Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Helmut Langfischer
Affiliation:
Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
Emmerich Bertagnolli
Affiliation:
Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
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Abstract

We report on metal-organic chemical vapor deposition (MOCVD) of ultrathin zirconium dioxide on (100) silicon. Special emphasis is put on the evolution of surface topography and the impact of processing parameters on the chemical composition of the films. Electrical characterization by means of MOS structures has been performed to assess the interface quality and the dielectric properties of the layers. Interface trap density is observed to be around 5.1011 cm-2.eV-1 at midgap for (100)-oriented substrates. Leakage currents in the ultrathin regime are significantly reduced compared to equivalent SiO2-layers. Trap density and leakage current are strongly sensitive to annealing in different atmospheres. However, electrical characteristics are shown to be positively affected rather by annealing in slightly reducing than in oxidizing atmospheres. All temperatures throughout the gate insulator formation process do not need to exceed 650°C, and thus allow to keep the thermal budget low.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N5.7
Copyright
Copyright © Materials Research Society 2003

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References

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