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Ultra - Shallow p+/n Junction Formed by Plasma Ion Implantation
Published online by Cambridge University Press: 17 March 2011
We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900 °C and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10s.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.7
- Copyright © Materials Research Society 2000