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The two origins of p-type conduction in transparent conducting Ga-doped SnO2 thin films

Published online by Cambridge University Press:  20 June 2011

Huan-hua Wang ,
Tieying Yang ,
Baoyi Wang ,
Kurash Ibrahim  and
Xiaoming Jiang
Huan-hua Wang*
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Tieying Yang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Baoyi Wang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Kurash Ibrahim
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Xiaoming Jiang
Affiliation:
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
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Abstract

The p-type conduction in transparent Ga-doped SnO2 thin films was realized and its two origins were discerned through comparison experiments associated with growth conditions, Rutherford backscattering spectroscopy and x-ray photoelectron spectroscopy analysis. All the experiment results suggest that the adsorbed oxygen both in the grain boundaries and at the surfaces is another origin of the net hole conduction in the polycrystalline thin films. This mechanism provides a fairy well explanation for the growth temperature dependence of the p-type conductivities of the films. It also offers a useful guide to better the properties of p-type conducting oxide thin films.

Keywords

oxideadsorptiongrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d07-02
Copyright
Copyright © Materials Research Society 2011

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Footnotes

†

Present address: Shanghai Synchrotron Radiation Facility, Shanghai 201204, China

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