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Tritium Induced Defects in Amorphous Silicon

Published online by Cambridge University Press:  21 March 2011

J. Whitaker ,
J. Viner ,
S. Zukotynski ,
E. Johnson ,
P.C. Taylor  and
P. Stradins
J. Whitaker
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
J. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A1
E. Johnson
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A1
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. Stradins
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A2.4
Copyright
Copyright © Materials Research Society 2004

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References

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