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Transport and Low Temperature Specific Heat Measurements of CrSi2 Single Crystals

Published online by Cambridge University Press:  15 February 2011

J. C. Lasjaunias ,
U. Gottlieb ,
O. Laborde ,
O. Thomas  and
R. Madar
J. C. Lasjaunias
Affiliation:
Centre de Recherches sur les Très Basses Températures, Laboratoire associè à l'Université J. Fourrier, CNRS BP 166, 38042 Grenoble Cedex 9, France
U. Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
O. Laborde
Affiliation:
Centre de Recherches sur les Très Basses Températures, Laboratoire associè à l'Université J. Fourrier, CNRS BP 166, 38042 Grenoble Cedex 9, France Laboratoire des Champs Magnétiques Intenses, CNRS, BP 166, 38042 Grenoble Cedex 9, France
O. Thomas
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
R. Madar
Affiliation:
Laboratoire des Matériaux et du Génie Physique, Ecole Nationale Supérieure de Physique de Grenoble, Institut National Polytechnique de Grenoble, BP 46, Domaine Universitaire, 38402 St. Martin d'Hères, France
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Abstract

We have measured the Hall coefficient and the resistivity of single crystals of CrSi2. This compound crystallises in the hexagonal C40 structure and is generally reported as a semiconductor with a gap of around 0.35 eV. The resistivity is large, several hundreds of μΩ.cm and exhibits a metallic behaviour. RH leads to a hole concentration of 8.5×1026 m−3 at 300K.

The specific heat at low temperature (0.7 K < T < 8 K ) can be describe as the sum of an electronic (γΓ) and a phonon (βT3) contribution. The analysis of the data leads to θD = 556 K and to an electronic density of states which is only two times smaller than those obtained for the metallic parent compounds VSi2, NbSi2 and TaSi2. This result questions the semiconducting nature of the chromium disilicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 343
Copyright
Copyright © Materials Research Society 1996

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