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Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

Published online by Cambridge University Press:  01 February 2011

Hiroshi Uchida
Affiliation:
Department of Chemistry, Faculty of Science and Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Seiichiro Koda
Affiliation:
Department of Chemistry, Faculty of Science and Engineering, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Hirofumi Matsuda
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1–1–1 Umezono, Tsukuba, 305–8568, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1–1–1 Umezono, Tsukuba, 305–8568, Japan
Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
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Abstract

Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12 (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15 (x = 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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