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Time Resolved Dynamics of Femtosecond Laser Ablation of Si (100) with Thin Thermal Oxide Layers (20 - 1200 nm)

Published online by Cambridge University Press:  01 February 2011

Joel Patrick McDonald
Affiliation:
jpmcdona@umich.edu, University of Michigan, Applied Physics, Gerstacker Building, RM B122, 2200 Bonisteel Ave., Ann Arbor, MI, 48109-2099, United States, 734-647-9498
Vanita R. Mistry
Affiliation:
vanita@umich.edu, University of Michigan, Mechanical Engineering, 2250 G.G. Brown, 2350 Hayward, Ann Arbor, MI, 49109-2125, United States
John A. Nees
Affiliation:
nees@umich.edu, University of Michigan, Center for Ultrafast Optical Science, 1006 Gerstacker Building, Ann Arbor, MI, 48109, United States
Steven M. Yalisove
Affiliation:
smy@umich.edu, University of Michigan, Materials Science and Engineering, H. H. Dow Building, 2300 Hayward St., Ann Arbor, MI, 48109-2136, United States
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Abstract

Femtosecond (fs = 10−15 sec.) laser ablation of Si(100) with thermally grown oxide films was studied with pump/probe imaging techniques in order to determine the role of film thickness on ablation dynamics. Two different imaging geometries were used in this study. Front view images were formed with the reflection of a delayed probe pulse from the area of a sample irradiated with a pump pulse. By changing the delay between the pump and probe pulses, images were obtained showing the evolution of the surface as a function of time (0 – 12 ns after the arrival of the pump pulse). The side view imaging technique, also known as shadowographic imaging, an image was formed of a delayed probe pulse which passed through the ablation plume produced by a pump pulse parallel to the sample surface. Both laser induced shock wave propagation and material removal were observed to change with increased thermal oxide thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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