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Tie Effect of Rare-Earth Elements on the Entroy of Radiation Defects Ionization in N-Type Go

Published online by Cambridge University Press:  21 February 2011

V.V. Petrov ,
T.D. Kharohenko  and
V.Yu. Yavid
V.V. Petrov
Affiliation:
Byelarusian State University, Physics Department, Minsk, Republic Belarus'
T.D. Kharohenko
Affiliation:
Byelarusian State University, Physics Department, Minsk, Republic Belarus'
V.Yu. Yavid
Affiliation:
Byelarusian State University, Physics Department, Minsk, Republic Belarus'
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Abstract

Te analyses of the processes of radiation defect formation in germanium doped with phosphorus in the presence of rare-earth element neodimium and without it has been carried out.It has been shown that the presence of neodimium in n-Ge results in the change of enthalpy and entropy of the major radiation defect ionization (complex with the level being near EB-0.20 eV). The change of enthalpy by 0.03-0.04 eV as well as more than six fold increase of entropy of the complex ionization in Ge:Nd has been stated to be connected with the local deformation of the lattice around defect formed in the process of irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 229
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Salmanov, A.R., Aleksandrova, G.I., Voronkova, G.I. et al. , Izv. Akad. Nauk SSSR, Ser.Neorg. Mater. 14, 85 (1978).Google Scholar
2. Movchan, E.O., Bondar, M.M., Ukrain. Fiz. Zh. 8, 496 (1963).Google Scholar
3. Levinzon, D.I., Sachkov, G.V., Smirnov, Yu.M., Shershel, V.A., Izv. Akad. Nauk SSSR, Ser.Neorg. Mater. 4, 280 (1968).Google Scholar
4. Baransky, N.I., Badakov, V.V., Levinzon, D.I., Izv. Akad. Nauk SSSR, Ser.Neorg. Mater. 3, 1259 (1967).Google Scholar
5. Mandelkorn, J., Schwarts, L., Broder, J., Kautz, H., Ulman, R., J. Appl. Phys. 35, 2258 (1964).Google Scholar
6. Petrov, V.V., Prosolovich, V.S., Tsyrulkevich, G.S., Karpov, Yu.A., Izv. Akad. Nauk SSSR, Ser.Neorg. Mater. 23, 1386 (1987).Google Scholar
7. Karpov, Yu.A., Mazurenko, V.V., Petrov, V.V., Prosolovich, V.S., Tkachev, V.D., Fiz. Tekdh. Poluprovodn. 18, 368 (1984).Google Scholar
8. Mashovets, T.V., Fkntsev, V.V., Abdurakhmanova, S.N., Fiz. Tekh. Poluprovodn. 8, 96 (1974).Google Scholar
9. Hoffmann, H.J., Appl. Phys. 19, 307 (1979).Google Scholar
10. Makarenko, L.F., Markevich, V.P., Murmn, L.I., Fiz. Tekh. Poluprovodn. 19, 1935 (1985).Google Scholar
11. Bourgoin, J., Lannoo, M., Point Defects in Semioonduotors II. Experimental aspects, (Springer-Verlag, Berlin, Heidelberg, New York, 1983), p.174.Google Scholar
12. Voronkov, V.V., Fiz. Tekh. Poluprovodn. 5, 920 (1971).Google Scholar
13. Tkaohev, V.D., Urenev, V.I., Fiz. Tekh. Poluprovodn. 5, 1516 (1971).Google Scholar
14. Golubev, V.G., Ivanov-Omsky, V.I., Kropotov, G.I., Fiz. Tverd. Tela, 24, 3410 (1982).Google Scholar
15. Burton, J.A., Prim, R.C., Slichter, W.P., J. Chem. Phys. 21, 1987 (1953).Google Scholar
16. Kodera, H., Japan J. Appl. Phys. 2, 212, (1963).Google Scholar