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Threading Dislocation Densities in Mismatched Heteroepitaxial (001) Semiconductors

Published online by Cambridge University Press:  26 February 2011

J. E. Ayers ,
S.K. Ghandhi  and
L. J. Schowalter
J. E. Ayers
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
S.K. Ghandhi
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
L. J. Schowalter
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

In this paper we propose a theory which accounts for the thickness dependence of threading dislocation densities in mismatched heteroepitaxial (001) semiconductors. This theory predicts that, for thick, planar, highly-mismatched heteroepitaxial layers with equilibrium strain, the threading dislocation density should be proportional to f/h, where f is thelattice mismatch and h is the film thickness. These predictions are in good agreement with experimental resultsin the GaAs on Si(001) system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 661
Copyright
Copyright © Materials Research Society 1991

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References

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