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Thickness Dependence of the Optical and Electrical Properties of Thin A-Si:H Films

Published online by Cambridge University Press:  28 February 2011

F. Demichelis ,
E. Mezzetti ,
P. Mpawenayo ,
A. Tagliaferro ,
E. Tresso ,
S. Bourquard ,
P. Rava ,
G. Della Mea  and
P. Mazzoldi
F. Demichelis
Affiliation:
Dipartimento di Fisica, Politecnico Torino, C.so Duca Abruzzi 24, 10129 Torino, Italia
E. Mezzetti
Affiliation:
Dipartimento di Fisica, Politecnico Torino, C.so Duca Abruzzi 24, 10129 Torino, Italia
P. Mpawenayo
Affiliation:
Dipartimento di Fisica, Politecnico Torino, C.so Duca Abruzzi 24, 10129 Torino, Italia
A. Tagliaferro
Affiliation:
Dipartimento di Fisica, Politecnico Torino, C.so Duca Abruzzi 24, 10129 Torino, Italia
E. Tresso
Affiliation:
Dipartimento di Fisica, Politecnico Torino, C.so Duca Abruzzi 24, 10129 Torino, Italia
S. Bourquard
Affiliation:
Elettrorava S.p.A., 10040 Savonera, Torino, Italia
P. Rava
Affiliation:
Elettrorava S.p.A., 10040 Savonera, Torino, Italia
G. Della Mea
Affiliation:
Dipartimento Fisica, Universita Padova, Via F. Marzolo 8, 35131 Padova, Italia
P. Mazzoldi
Affiliation:
Dipartimento Fisica, Universita Padova, Via F. Marzolo 8, 35131 Padova, Italia
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Abstract

Optical and electrical properties are investigated as a function of thickness for two sets of samples of a-Si:H films deposited respectively by RF magnetron sputtering and by RF glow discharge under the same conditions. The hydrogen concentration, the transmittance and reflectance spectra in the UV-visible-NIR and the resistivity were measured for both sets of samples. Relationships between index of refraction, absorption coefficient, imaginary part of the dielectric constant, optical band gap, resistivity and the thickness are found and interpreted. The thickness dependence of these parameters is related to the larger amount of inhomogeneities present in sputtered samples with respect to glow discharge samples.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 191
Copyright
Copyright © Materials Research Society 1986

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References

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