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Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  17 March 2011

Kun Ho Ahn
Affiliation:
Dept. of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
Sang Sub Kim
Affiliation:
Dept. of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon 540-742, Korea
Sunggi Baik
Affiliation:
Dept. of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
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Abstract

Thickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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