Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-12T04:32:44.495Z Has data issue: false hasContentIssue false
  • English
  • Français

Thickness and Interface Layer Effects on the Amorphous Silicon Film Property Studied by Various Photoluminescence Excitation Wavelengths

Published online by Cambridge University Press:  17 March 2011

Guozhen Yue ,
Daxing Han ,
Jeffrey Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Jeffrey Yang
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
Subhendu Guha
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
Get access

Abstract

We have studied the structure of highly hydrogen-diluted a-Si:H films by using Raman and photoluminescence (PL) spectroscopies. Raman spectra show a typical broad a-Si:H peak in the films with different substrate surfaces or i-layer thicknesses, except for one 1.4 μm film deposited directly onto a stainless steel (ss) substrate that shows the c-Si peak. An apparent μc-Si component was characterized by a low energy PL enhancement in a 0.5 μm film deposited directly onto the ss substrate. When a thin n-layer was inserted between the substrate and the a-Si film, no μc-Si growth was found in the first 0.5-1.0 μm thick layer but there was a μc-Si component in the top surface layer when the film was grown to a 1.5 μm thickness. The nonuniformity structure along the growth direction was characterized by PL spectroscopy using varied laser excitation wavelengths of 325, 488, 514.5, and 632.8 nm. We find that PL spectroscopy is a sensitive tool to characterize the microcrystallinity of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.9
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Yang, J., Xu, X., and Guha, S., Mater. Res. Soc. Sysmp. Proc. 336, 687, (1994).Google Scholar
[2]Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R.W., and Wronski, C.R., Conference Record of the 25th IEEE PVSC, IEEE, New York, 1996, p1165.Google Scholar
[3]Tsu, D.V., Chao, B.S., Ovshinsky, S.R., Guha, S., and Yang, J., Appl. Phys. Lett., 71, 1317, (1997).Google Scholar
[4]Guha, S., Yang, J., Williamson, D.L., Lubianiker, Y., Cohen, J.D. and Mahan, A.H., Appl. Phys Lett., 74, 1860, (1999).Google Scholar
[5]Koh, Joohyun, Ferlauto, A.S., Rovira, P.I., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett., 75, 2286 (1999)Google Scholar
[6]Yang, J., private communication.Google Scholar
[7]Beeman, D., Tsu, R., and Thorpe, M.F., Phys. Rev. B32, 874, (1985).Google Scholar
[8]Yue, Guozhen, Lorentzen, J.D., Lin, Jing, Han, Daxing, and Wang, Qi, Appl. Phys. Lett., 75, 492, (1999).Google Scholar
[9]Veprek, S., Sarott, F.A., and Iqbal, Z., Phys. Rev. B36, 3344, (1987).Google Scholar