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Thermoelectric Properties of ZnSb Films Grown by MOCVD

Published online by Cambridge University Press:  15 February 2011

R. Venkatasubramanian ,
E. Watko  and
T. Colpitts
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA.
E. Watko
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA.
T. Colpitts
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA.
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Abstract

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160°C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200°C. A short annealing of the ZnSb film at temperatures of ˜ 200°C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-ω method are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 145
Copyright
Copyright © Materials Research Society 1997

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