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Thermoelectric Properties of PbSe Epitaxial Thin Films and PbSe/EuS Heterostructures

Published online by Cambridge University Press:  21 March 2011

Mildred S. Dresselhaus
Affiliation:
MIT, Dept of Physics, Cambridge, MA, USA
Gene Dresselhaus
Affiliation:
MIT, Dept of Physics, Cambridge, MA, USA
Elena I. Rogacheva
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
Tatyana V. Tavrina
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
Sergey N. Grigorov
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
Konstantin A. Nasedkin
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
Valentine V. Volobuev
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
Alexander Yu. Sipatov
Affiliation:
National Technical University “Kharkov Polytechnic Institute”, Kharkov, UKRAINE
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Abstract

Systematic investigations were performed of the thickness dependences of the thermoelectric properties of PbSe thin films, freshly prepared and exposed to air at room temperature. It is shown that oxidation leads to a sharp change in the thermoelectric properties of the PbSe films including a change in the sign of the dominant carrier type from n-type to p- type at d ≤ 80 nm. Using a two carrier model for thin films (d < 50 nm) and a two-layer model for thick films (d > 50 nm) allows us to give a satisfactory qualitative interpretation of the observed experimental dependences of the thermoelectric properties on the film thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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