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Thermally Stimulated Conductivity in a-Si:H at low Temperatures

Published online by Cambridge University Press:  16 February 2011

M. Zhu
Affiliation:
Dept.of Physics, Graduate School, Academia Sinica, Beijing 100039, P.O. Box 3908, China
M.B. Von Der Linden
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA, Utrecht, The Netherlands
W.F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA, Utrecht, The Netherlands
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Abstract

The low temperature thermally stimulated conductivity (TSC) in a-Si:H film has been investigated in the temperature range from 20 to 150 K. Unlike the results of the high temperature TSC, the low temperature peak value and position (T m ) of TSC do not depend on the starting temperature T0 at low temperatures. This new phenomenon can not be explained by TSC theory [1]. Based on the multiple trapping (MT) Model, TSC theory limits its application to the intermediate and high temperature range. In this paper, a model of the hopping conduction with the transport energy E t in the band tail is proposed to understand the behavior of the low temperature TSC in which the thermal emission energy E m does not depend on the starting temperature of TSC.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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