Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-27T17:09:59.939Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stress-Induced Grain Boundary Voiding and Notching in Narrow Al-Based Metallizations

Published online by Cambridge University Press:  22 February 2011

Che-Yu Li ,
R. D. Black  and
W. R. LaFontaine
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
R. D. Black
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
W. R. LaFontaine
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
Get access

Abstract

Grain boundary voiding has been identified as a diffusional creep mechanism that produces failure of narrow Al-based metallizations during thermal aging. It is considered to be a reliability concern for sub-micron metallizations because the resulting failure rate has been observed to be strongly line width dependent. This paper presents a theoretical model for stress-induced grain boundary voiding. The proposed model is shown to account for the experimentally observed temperature and time dependence of thermal aging-induced line failure data reported in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 225
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hinode, K., Owada, N., Nishida, T., and Mukai, K., J. Vac. Sci. Technol. B 5, 518 (1987).Google Scholar
2. McPherson, J.W. and Dunn, C.F., J. Vac. Sci. Technol. B 5, 1321 (1987).Google Scholar
3. Klema, J., Pyle, R., and Domangue, E., Proc. of the IEEE Trans. On Reliability Physics, 1 (1984).Google Scholar
4. Li, C.-Y., Black, R.D., and LaFontaine, W.R., Appl. Phys. Lett. 4, 31 (1988).Google Scholar
5. Hull, D. and Rimmer, D.E., Philos. Mag. 4, 673 (1959).Google Scholar
6. Chen, I.-W. and Argon, A.S., Acta Metall. 29, 1759 (1981).Google Scholar
7. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Electron Devices ED–34 689 (1987).Google Scholar
8. Doerner, M.F., Gardner, D.S., and Nix, W.D., J. Mater. Res. 1, 845 (1986).Google Scholar
9. Fine, M.E., Phase Transformations in Condensed Systems, (MacMillan, New York, 1964), p. 56.Google Scholar
10. Frost, H.J. and Ashby, M.F., Deformation Mechanisms, (Permagon Press Oxford, 1982), p. 21.Google Scholar