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Thermal Stability of SiHn Configurations in Fz Silicon Single Crystals

Published online by Cambridge University Press:  03 September 2012

Masami Kouketsu
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Seiichi Isomae
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Thermal stability of SiHn (n=1∼4) configurations in FZ silicon crystals grown in Ar/H2 has been investigated by means of infrared absorption spectroscopy. Infrared absorption peaks at 2210, 2192, 2123 and 1946 cm−1, which are due to SiH4, SiH3, SiH2 and SiH units in silicon lattice, has been observed. It is found that the concentration of SiH4 and SiH increase with the decrease in SiH2 and SiH3 concentration at 500°C, and vice versa at 600°C. Annealing results suggest thermally induced structural transformations of SiHn configurations. We propose a model of the transformations through the cleavage of adjacent Si-H bonds to form a Si-Si bond and a H2 molecule, as well as the reaction of a H2 molecule with a Si-Si bond.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Pearton, S. J., Corbett, J. W., and Shi, T. S., Appl. Phys. A, 43, 153 (1987).CrossRefGoogle Scholar
[2] Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Appl. Phys. Lett. 56, 882 (1982).CrossRefGoogle Scholar
[3] Pankov, J. I., Wance, R. O., and Berkeyheiser, J. E., Appl. Phys. Lett. 45, 1100 (1984).CrossRefGoogle Scholar
[4] Thewalt, M. L. W. and Lightowlers, E.C., Appl. Phys. Lett. 46, 689 (1985).CrossRefGoogle Scholar
[5] Stavola, M., Pearton, S. J., Lopata, J., and Dautremont-Smith, W. C., Phys. Rev. B, 37, 8313 (1988).CrossRefGoogle Scholar
[6] Johnson, N. M., Herring, C., and Chadi, D. J., Phys. Rev. Lett. 56, 769 (1986).CrossRefGoogle Scholar
[7] Benton, J. L., Doherty, C. J., Ferris, S. D., Flamm, D. L., Kimerling, L. C., and Leamy, H. J., Appl. Phys. Lett. 3. 6, 670 (1980).CrossRefGoogle Scholar
[8] Pearton, S. J. and Tavendale, A. J., Phys. Rev. B, 26, 7105 (1982).CrossRefGoogle Scholar
[9] Van de Walle, C. G., in Hydrogen in Semiconductors, edited by Pankove, J.I. and Johnson, N.M., 34, (Academic, Boston, 1991), p. 585.CrossRefGoogle Scholar
[10] Tarnow, E. and Street, R. A., Phys. Rev. B, 45, 3366 (1992).CrossRefGoogle Scholar
[11] Cui, S., Mai, Z., and Qian, L., Scientia Sinica (A), 22, 213 (1984).Google Scholar
[12] Bai, G. R., Qi, M. W., Xie, L. M., and Shi, T. S., Solid State Communi. 56, 277 (1985).CrossRefGoogle Scholar
[13] Shi, T. S., Xie, L. M., Bai, G. R., and Qi, M. W., Phys. Stat. Sol. (b), 131. 511 (1985).CrossRefGoogle Scholar
[14] Fang, C. J., Gruntz, K. J., Ley, L. and Cardona, M., J Non-Cryst. Solids, 35–35, 787 (1980).Google Scholar
[15] Shi, T. S., Sahu, S. N., Oehrlein, G. S., Hiraki, A., and Corbett, J. W., Phys. Stat. Sol. (a), 74, 329 (1982).CrossRefGoogle Scholar
[16] Lucovsky, G., Solid State Communi. 29, 571 (1978).CrossRefGoogle Scholar
[17] Qi, M. W., Bai, G. R., Shi, T. S., Xie, L. M., Mater. Lett. 2, 467 (1985).CrossRefGoogle Scholar
[18] Kittel, C., Solid State Physics, 5th ed. (John Wiley & Sons, New York, 1976), p. 543.Google Scholar
[19] Shi, T. S., Sahu, S. N., Corbett, J. W. and Snyder, L. C., Scientica Solidi, 81b, 637 (1977).Google Scholar

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