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Thermal Stability of Amorphous Multilayer Structures

Published online by Cambridge University Press:  26 February 2011

K. Tanaka ,
I. Honma ,
H. Tamaoki  and
H. Komiyama
K. Tanaka
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba, Ibaraki 305
I. Honma
Affiliation:
University of Tokyo, Bunkyo-ku, Tokyo 113
H. Tamaoki
Affiliation:
University of Tokyo, Bunkyo-ku, Tokyo 113
H. Komiyama
Affiliation:
University of Tokyo, Bunkyo-ku, Tokyo 113
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Abstract

Firstly, a general discussion on the crystallization of amorphous multilayer structures is presented from the viewpoints of thermodynamics, where both a nature of the heterointerface and a repeat distance of the layer are theoretically shown to be key factors for determining the crystallization temperature (Tc). Secondly, experimental observations are described of the effect of each layer thickness and the heterointerface on the structural stability of reactively-sputtered a-Ge:H(a-Ge)/a-GeNx multilayer films. It is demonstrated that Tc of a-Ge:H(a-Ge) increases with decreasing its layer thickness and/or increasing the thickness of a-GeNx layer, which is interpreted qualitatively within the framework of the macroscopic thermodynamics. Relevant phenomena observed by other groups as well as the present results are discussed in a unified manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 343
Copyright
Copyright © Materials Research Society 1988

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