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Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

J. Whitaker  and
P. C. Taylor
J. Whitaker
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
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Abstract

We report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A2.2
Copyright
Copyright © Materials Research Society 2003

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