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Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon

Published online by Cambridge University Press:  25 February 2011

J. Z. Yuan ,
R. Hartmann ,
I. V. Verner  and
J. W. Corbett
J. Z. Yuan
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, University at Albany - SUNY, Albany, NY 12222
R. Hartmann
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, University at Albany - SUNY, Albany, NY 12222 Department of Physics, University at Wuerzburg, 8700 Wuerzburg, Germany
I. V. Verner
Affiliation:
Department of Physics, Moscow Institute of Electronic Technology, 103498 Moscow (Zelenograd) K-498, Russia
J. W. Corbett
Affiliation:
The Institute for the Study of Defects in Solids, Department of Physics, University at Albany - SUNY, Albany, NY 12222
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Abstract

Experiments were conducted to determine the sample temperature dependence of ion-beaminduced in-plane stress in silicon. Implantations were carried out for B+, Ar+ and Ti+ at various dose ranges and different silicon temperatures. The ion-beam-induced surface stress was measured by using a newly developed technique, which has a high sensitivity. A large abnormal stress was observed for B+ implantation at room temperature. The results show that the silicon temperature has a significant effect on the ion-beam-induced stress. The influence of temperature on stress curves were presented. This effect is consistent with the temperature effect on the ionbeam-induced amorphization of silicon. However, the effect on chemically active ions, such as B+, is significant, indicating that some preferable temperature can be used for minimizing ionimplantation-induced stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 307
Copyright
Copyright © Materials Research Society 1992

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