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Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

O. Ueda
Affiliation:
Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243–01, Japan
S. Isozumi
Affiliation:
Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243–01, Japan
S. Komiya
Affiliation:
Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243–01, Japan
T. Kusunoki
Affiliation:
Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243–01, Japan
I. Umebu
Affiliation:
Fujitsu Laboratories Ltd., 1677 Ono, Atsugi 243–01, Japan
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Abstract

Defects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Tem Observation of defects in InGaAsP and InGaP Crystals on GaAs Substrates Grown by Liquid Phase Epitaxy
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