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Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation

Published online by Cambridge University Press:  10 February 2011

C. Hobbs
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
R. Hegde
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
B. Maiti
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
R. Nagabushnam
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. La
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
K. Reid
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
A. Dip
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. Grove
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
J. Conner
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
V. Kaushik
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. Prabhu
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
A. Anderson
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
S. Bagchi
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
J. Mendonca
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
P. Tobin
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
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Abstract

Tantalum pentoxide (Ta2O5) films were formed by oxidizing thin tantalum (Ta) films on bare and NO-nitrided silicon substrates. The 43-400 Å thick Ta films were deposited using physical vapor deposition (PVD) and oxidized using O2 for 2-60 min at 550-800 C in a furnace or single wafer tool. Uniform and stoichiometric Ta2O5 films were successfully produced as determined from XRD, AES depth profiling, XTEM, and ellipsometric analysis. The nitridation pretreatment was found to minimize the interfacial Ta-Si reactions which occur during the oxidation. Well-behaved CV and IV curves were obtained from mercury probe measurements. No CV hysteresis was observed. An equivalent oxide thickness of 38 Å and a leakage current of 7×10−9 A/cm2 at +1V were obtained for a 120 Å thick Ta2O5 film on a 15 Å interfacial SiO2 layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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