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Tantalum and Tantalum Silicide High Temperature Rectifying Contacts on Type MB Natural Diamond

Published online by Cambridge University Press:  25 February 2011

Scott R. Sahaida  and
Dale G. Thompson
Scott R. Sahaida
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, 79 T.W. Alexander Dr., P.O. Box 13608, Research Triangle Park, NC 27709
Dale G. Thompson
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, 79 T.W. Alexander Dr., P.O. Box 13608, Research Triangle Park, NC 27709
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Abstract

Tantalum and tantalum suicide contacts were investigated as high temperature rectifying contacts on type MB natural diamond. Tantalum and silicon were co-sputtered using DC and RF planar magnetrons, respectively. Current-voltage measurements of tantalum suicide subjected to various anneals and of pure tantalum contacts were recorded at 50°C intervals up to 400°C which was the desired operating temperature of the rectifying contact. Tantalum contacts to diamond maintained good rectification up to 300°C whereas amorphous tantalum suicide operated well up to 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 151
Copyright
Copyright © Materials Research Society 1992

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References

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