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A Systematic Investigation of Strain Relaxation, Surface Morphology and Defects in Tensile and Compressive InGaAs/InP Layers

Published online by Cambridge University Press:  15 February 2011

C. Ferrari
Affiliation:
CNR-MASPEC Institute, Parco Area delle Scienze 37/A, I-43010 Fontanini-Parma, Italy
L. Lazzarini
Affiliation:
CNR-MASPEC Institute, Parco Area delle Scienze 37/A, I-43010 Fontanini-Parma, Italy
G. Salviati
Affiliation:
CNR-MASPEC Institute, Parco Area delle Scienze 37/A, I-43010 Fontanini-Parma, Italy
M. Natali
Affiliation:
INFM, Department of Physics, University of Padova, Via Marzolo 8, I-35131 Padova, Italy
M. Berti
Affiliation:
INFM, Department of Physics, University of Padova, Via Marzolo 8, I-35131 Padova, Italy
D. De Salvador
Affiliation:
INFM, Department of Physics, University of Padova, Via Marzolo 8, I-35131 Padova, Italy
A.V. Drigo
Affiliation:
INFM, Department of Physics, University of Padova, Via Marzolo 8, I-35131 Padova, Italy
G. Rossetto
Affiliation:
CNR-ICTIMA Institute, Corso Stati Uniti 4, I-35127 Padova, Italy
G. Torzo
Affiliation:
CNR-ICTIMA Institute, Corso Stati Uniti 4, I-35127 Padova, Italy
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Abstract

The results of a systematic investigation by transmission electron microscopy (TEM), cathodoluminescence (CL), Rutherford backscattering (RBS), X-ray diffraction and topography and scanning force microscopy (SFM) techniques on several InGaAs/InP compressive and tensile strained layers covering the misfit range from −2.3 to 1.5×10−2 and grown by the metal organic vapor phase epitaxy (MOVPE) technique are reported. In compressively strained films the same dependence for the residual strain vs the film thickness as for the InGaAs/GaAs is found whereas a different strain release rate and different extended defects are found in tensile stressed InGaAs alloy. In particular in tensile stressed samples, grooves, planar defects and cracks are present in addition to the interfacial network of misfit dislocations. The correlation between the observed planar defects and the mechanisms of strain relaxation in the case of tensile strained layers is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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A Systematic Investigation of Strain Relaxation, Surface Morphology and Defects in Tensile and Compressive InGaAs/InP Layers
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A Systematic Investigation of Strain Relaxation, Surface Morphology and Defects in Tensile and Compressive InGaAs/InP Layers
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A Systematic Investigation of Strain Relaxation, Surface Morphology and Defects in Tensile and Compressive InGaAs/InP Layers
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