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Synchrotron Radiation Induced Surface Reactions: A New Method for Metal Film Deposition on Semiconductors

Published online by Cambridge University Press:  15 February 2011

Roberto Zanoni  and
Maria Novella Piancastelli
Roberto Zanoni
Affiliation:
University “La Sapienza”, Department of Chemistry, 00185 Rome, Italy
Maria Novella Piancastelli
Affiliation:
University “Tor Vergata”, Department of Chemical Sciences and Technologies, 00173 Rome, Italy
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Abstract

A systematic investigation of the adsorption properties of several organometallic compounds on silicon surfaces is reported. In this framework, a new method to deposit thin metal films on silicon surfaces is described, which is based on a synchrotron radiation induced photodecomposition reaction. The precursors are metal carbonyls adsorbed on single-crystal Si surfaces in ultrahigh vacuum conditions. Irradiation of these adsorbatesubstrate systems with unmonochromatized synchrotron radiation (“white light”) induces a chemical reaction leading to a thin metal film on the surface. This process has been monitored in situ by photoemission. The fingerprint for the film formation is the appearance of a clear Fermi edge in the valence band. We have been able to deposit thin films of Mo, W and Fe on Si(111) surfaces. This method offers several advantages over traditional techniques, and namely the mild conditions and the limited number of process steps. An intriguing future development under testing is the possibility of creating ordered patterns on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 137
Copyright
Copyright © Materials Research Society 1993

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References

Literature References

[1] Swanson, J.R., Friend, C.M. and Chabal, Y.J. J.Chem.Phys. 87, (1987) 5028 CrossRefGoogle Scholar
[2] Xu, X. and Steinfeld, J.I. Appl.Surf.Sci. 45, (1990) 281 CrossRefGoogle Scholar
[3] Foord, J.S. and Jackman, R.B. Surf.Sci. 171, (1986) 197 CrossRefGoogle Scholar
[4] Ehrlich, D.J., Osgood, R.M. Jr and Deutsch, T.F. J.Vac.Sci.Technol. B 1, (1983) 969 Google Scholar
[5] Gluck, N.S., Ying, Z., Bartosch, C.E. and Ho, W. J.Chem.Phys. 86, (1987) 4957 Google Scholar
[6] Zanoni, R., Piancastelli, M.N., McKinley, J.T. and Margaritondo, G. Appl.Phys.Lett. 55, 1020 (1989)Google Scholar
[7] Zanoni, R., Piancastelli, M.N., McKinley, J.T. and Margaritondo, G. Phys.Scripta 41, 636 (1990)Google Scholar
[8] Zanoni, R., Piancastelli, M.N., Marsi, M. and Margaritondo, G. Solid State Commun. 76, 1239 (1990)Google Scholar
[9] Zanoni, R., Piancastelli, M.N., Marsi, M. and Margaritondo, G. J.Vac.Sci.Technol. A 9, 931 (1991)Google Scholar
[10] Zanoni, R., Piancastelli, M.N., Marsi, M. and Margaritondo, G. J.Electron Spectrosc.Relat.Phenom. 57, 199 (1991)Google Scholar
[11] Zanoni, R., Piancastelli, M.N., Jin, X., Sirotti, F. and Rossi, G. Appl.Surf.Sci. 56–58, 474 (1992)Google Scholar
[12] Taubenblatt, M.A. and Helms, C.R. J.Appl.Phys. 59, (1986) 1992 Google Scholar