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Surface Reaction Mechanism During Deposition of a-Si: 11 by PECVD

Published online by Cambridge University Press:  15 February 2011

Keiji Maeda ,
Atsushi Kuroe  and
Ikurou Umezu
Keiji Maeda
Affiliation:
Science University of Tokyo, Department of Materials Science and Technology, Noda, Chiba 278, Japan
Atsushi Kuroe
Affiliation:
Science University of Tokyo, Department of Materials Science and Technology, Noda, Chiba 278, Japan
Ikurou Umezu
Affiliation:
Science University of Tokyo, Department of Materials Science and Technology, Noda, Chiba 278, Japan
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Abstract

Hydrogen contents were investigated in a-Si:H films prepared by PECVD under various conditions. The H atom contents were divided into SiH and SiH2 densities by spectral deconvolution of the IR absorption. Dehydrogenation of SiHo simultaneously occurs with Si-Si bonding in the surface reaction. The mechanisms of surface reaction were proposed based on an analysis of the variation in S1H2 density with the deposition condition. There are two kinds of processes, the fast process and the slow process. The fast process incorporates SiH2 into the network. The activation energy of the slow process is 0.3 eV, which is due to the surface migration of adsorbed radicals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 131
Copyright
Copyright © Materials Research Society 1995

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