Skip to main content Accessibility help
×
Home
Hostname: page-component-79b67bcb76-6rw4p Total loading time: 0.199 Render date: 2021-05-14T05:30:10.339Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Surface Properties of GaAs Passivated With (NH4)2Sx Solution

Published online by Cambridge University Press:  15 February 2011

Kyung-Soo Suh
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Hyung-Ho Park
Affiliation:
Dept. of Ceramic Engineering, Yonsei University 134, Shinchon-dong, Sudaemoon-ku, SEOUL, 120-749, KOREA
Jong-Lam Lee
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Haechon Kim
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Kyung-Ik Cho
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Kyung-Soo Kim
Affiliation:
Semiconductor Technology Division, ETRI, Yusung P.O. Box 106, Taejon, 305-600, KOREA
Get access

Abstract

Surface properties of GaAs passivated with (NH4)2Sx solution have been compared with HCl-treated GaAs using X-ray photoelectron spectroscopy, Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bonds, which remain after successive rinsing for I minute in DI water. The evolution of Ga 2p3 and As 3d peaks in the sulfidation treated GaAs was monitored with the exposing time to air. After 10 days exposure to air, the Ga-O and As-O bonds slightly increased, but maintained almost constant for further exposure. The increase of Ga-O and As-O bonds induces the partial decomposition of sulfur bonds. Decomposition and evaporation behaviors of sulfur and oxygen were observed through the heat treatment of sulfidation treated GaAs under ultra high vacuum (less than l × 10-9 torr). After anneal at 350 – 450 °C, slight decrease of sulfur and oxygen due to the decomposition of As-O bond were observed. No more sulfur was found after anneal at 550 – 650 °C, where the decomposition of Ga-O bond was completed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Mada, Y., Wada, K., and Wada, Y., Appl Phys. Lett., 61(25), 1992, p. 2993.CrossRefGoogle Scholar
2. Sugahara, H., Oshima, M., Oigawa, H., and Nannichi, Y., J. Vac. Sci. Technol., A11(1), 1993, p. 52.CrossRefGoogle Scholar
3. Landheer, D., Yousefi, G.H., Webb, J.B., Kwok, R.W.M., and Lau, W.M., J. Appl. Phys., 75(7), 1994, p. 3516.CrossRefGoogle Scholar
4. Too, Y., Yelon, A., Sacher, E., Lu, Z.H., and Graham, J., Appl. Phys. Lett., 60(21), 1992, p. 2669.CrossRefGoogle Scholar
5. Chun, Y. J., Sugaya, T., Okada, Y., and Kawabe, M., Jpn. J. Appl, Phys., Vol.32, 1993, L287.CrossRefGoogle Scholar
6. Debiemme-Chouvy, C., Ballutaud, D., Pesant, J. C., and Etcheberry, A., Appl. Phys. Lett., 62(18), 1993, p. 2254.CrossRefGoogle Scholar
7. Lee, J.-L., Kim, D., Maeng, S. J., Park, H. H., Kang, J. Y., and Lee, Y. T., J. Appl. Phys., 73(7), 1993, p. 3539.CrossRefGoogle Scholar
8. Lu, Z. H., Graham, M J., Feng, X. H., and Yang, B. X., Appl. Phys. Lett., 62(23), 1993, p. 2932.CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Surface Properties of GaAs Passivated With (NH4)2Sx Solution
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Surface Properties of GaAs Passivated With (NH4)2Sx Solution
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Surface Properties of GaAs Passivated With (NH4)2Sx Solution
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *