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Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 by Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

Shigehiro Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, Japan+81-75-724-7415, +81-75-724-7400nishino@ipc.kit.ac.jp, mati@ma4.seikyou.ne.jp
Yasuichi Masuda
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, Japan+81-75-724-7415, +81-75-724-7400nishino@ipc.kit.ac.jp, mati@ma4.seikyou.ne.jp
Satoru Ohshima
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, Japan+81-75-724-7415, +81-75-724-7400nishino@ipc.kit.ac.jp, mati@ma4.seikyou.ne.jp
Chacko Jacob
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology Matsugasaki, Sakyo, Kyoto 606-8585, Japan+81-75-724-7415, +81-75-724-7400nishino@ipc.kit.ac.jp, mati@ma4.seikyou.ne.jp
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Abstract

We have grown epitaxial layer introducing buffer layer using N2 doping on 6H-SiC (1120) and (1100) substrate. The improvement of morphology could be obtained for (1120) and (1100) epilayers. Morphologies of (1120) epilayers were independent on off-orientations, Morphologies of (1100) epilayers were very sensitive to the off-orientations. The quality of epilayer, and impurity incorporation for a-plane were very influenced by the surface treatment before CVD growth compared to (0001) epilayers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 by Chemical Vapor Deposition
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Surface Morphology of 6H-SiC on various a-plane using Si2Cl6+C3H8+H2 by Chemical Vapor Deposition
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