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Surface behavior of heterosubstrates during BEN-MPCVD: a key for diamond heteroepitaxy

Published online by Cambridge University Press:  01 February 2011

Jean-Charles Arnault
Affiliation:
jean-charles.arnault@cea.fr, CEA-LIST DETECS - SSTM, Laboratoire Capteurs Diamant, Bât 451 - Boîte Courrier 45, Centre d'Etudes de Saclay, Gif sur Yvette, 91191, France, (33) 1 69 08 71 02 (office)
Samuel SAADA
Affiliation:
samuel.saada@cea.fr, CEA-LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif sur Yvette, 91191, France
Sophie DELCLOS
Affiliation:
Sophie.Delclos@ensiacet.fr, CEA-LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif sur Yvette, 91191, France
Luciana INTISO
Affiliation:
luciana intiso [luciana.intiso@gmail.com], Dipartimento di Scienze e Tecnologie Chimiche, Università di Roma Tor Vergata, Via della Ricerca Scientifica, Rome, Rome, 00133, Italy
Stéphane PECORARO
Affiliation:
Stephane PECORARO [st_pecoraro@hotmail.com], IPCMS-GSI, UMR 7504, BP 43, 23, rue du Loess, Strasbourg, 67034, France
Philippe BERGONZO
Affiliation:
philippe.bergonzo@cea.fr, CEA-LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif sur Yvette, 91191, France
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Abstract

The chemical stability of three heterosubstrates (Si, 3C-SiC and iridium) has been studied using the same MPCVD reactor during the successive steps of BEN process. An in situ sequential approach allows a monitoring of the chemical modifications induced by interactions between plasma and surfaces. Contrary to silicon, 3C-SiC and iridium underwent weak surface evolutions during BEN. This leads to favourable conditions for the interface formation in agreement with the better Highly Oriented Diamond films reported in the literature. A short description of the nucleation pathways identified for each heterosubstrate is also presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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