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Surface Absorption Below the Band Gap in a-Si:H Using Photoluminescence Absorption Spectroscopy

Published online by Cambridge University Press:  21 February 2011

S. Q. Gu ,
S. Nitta  and
P. C. Taylor
S. Q. Gu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
S. Nitta
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, Gifu, 501–11, Japan
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

Photoluminescence absorption spectroscopy or PLAS has been used to measure the below gap absorption in a-Si:H at 77 K. As the absorption probed by this technique is composed of contributions from the bulk and the surfaces of the a-Si:H, we have developed an improved sample structure to separate these two contributions. Two kinds of interface have been investigated: a-Si1−xNx:H/a-Si:H and a-Si1−xOx:H/a-si:H. For the studies ofa-Si1−xNx:H/a-Si:H.x, two samples have been employed. The first sample consisted of an a-Si1−xNx:H/a-Si:H/a-Si:H/a-Si1−xNx:H/NiCr layered structure; the second one had a similar structure except that the a-Si:H layer was interrupted periodically by two thin (100 A°) a-Si1−xNx:H layers to increase the contribution of the interface absorption. A shoulder of the absorption around 1.2 eV for the second sample, which was not found in the first one, is probably due to the interfaces between a-Si:H and a-Si1−xNx:H. All samples were light-soaked using an Ar+ laser (5145 A°). The increases in the absorption measured by PLAS at 77 K are essentially the same as the results of PDS at 300 K, which suggests that the interfaces do not contribute to the light-induced absorption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 843
Copyright
Copyright © Materials Research Society 1991

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References

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