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Sublimation growth of AlN bulk crystals by seeded and spontaneous nucleation methods

Published online by Cambridge University Press:  01 February 2011

Krishnan Balakrishnan
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Masao Banno
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Kiyotaka Nakano
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Go Narita
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Noritaka Tsuchiya
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Masataka Imura
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Motoaki Iwaya
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Satoshi Kamiyama
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Kenji Shimono
Affiliation:
Ceramic Operation, Ibiden Company Limited, Ogaki, Gifu 503–8503, Japan.
Tadashi Noro
Affiliation:
Ceramic Operation, Ibiden Company Limited, Ogaki, Gifu 503–8503, Japan.
Takashi Takagi
Affiliation:
Ceramic Operation, Ibiden Company Limited, Ogaki, Gifu 503–8503, Japan.
Hiroshi Amano
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
Isamu Akasaki
Affiliation:
Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468–8502, Japan.
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Abstract

Single crystals of AlN have been grown by seeded (on SiC substrates) and unseeded (spontaneous nucleation) sublimation techniques. Tantalum carbide coated graphite crucibles were used. Temperature gradient and source-substrate distance have been found to be the most influencing parameters of crystal growth. AlN crystals of maximum dimension 12 mm (length) × 10 mm (width) × 300 μm (thickness) were grown on 6H-SiC substrates and the best (0002) oriented crystal showed an XRD omega rocking curve FWHM of 4.81 arcmin. AlN nucleated as independent hexagonal islands and coalesced as growth progressed on. Growth rate of AlN grown on C-face SiC has been found to be higher than that on Si-face SiC. Tantalum carbide coated crucibles have been found to be better suited for AlN growth as the impurity incorporation in to the crystals due to crucible was very less. Spontaneously nucleated crystals exhibited an incompleted pyramid-like structure with (1010) and (1100) as their prominent faces.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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