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A study of V3+ and the Vanadium acceptor level in semi-insulating 6H-SiC

Published online by Cambridge University Press:  01 February 2011

Wonwoo Lee  and
Mary E. Zvanut
Wonwoo Lee
Affiliation:
University of Alabama at Birmingham 1300 University Blvd. Birmingham AL 35292, U.S.A.
Mary E. Zvanut
Affiliation:
University of Alabama at Birmingham 1300 University Blvd. Birmingham AL 35292, U.S.A.
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Abstract

Infrared absorption (IR) and electron paramagnetic resonance (EPR) spectroscopies are used to study the V3+ impurity and the vanadium acceptor level in 6H semi-insulating SiC. IR and EPR data obtained from samples cut from the same wafer support the assignment of the 0.60 and 0.62 eV IR absorption lines to substitutional V3+. Photo-induced EPR measurements reveal identical photo-thresholds for V3+ and V4+ ions. A peak at 0.8 eV, where the intensity of the three plus charge state decreases and the four plus charge state increases by an equal amount, is thought to represent excitation of an electron from V3+ to the conduction band edge. The 0.8 eV peak is therefore attributed to the V3+/4+ level. The difference between the optically measured value reported here and that measured previously using temperature dependent techniques is attributed thermal relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E1.3
Copyright
Copyright © Materials Research Society 2005

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